Low-pressure chemical vapor deposition using TEOS (tetraethylorthosilicate, Si(OC2H5)4) is a popular precursor for the deposition of silicon dioxide as an interlayer dielectric film. The use of TEOS does create problems on the downside of the process chamber in the vacuum pump lines. TEOS and its byproducts have a propensity to clog the vacuum pump line with solid and viscous-liquid effluent byproducts. This increases particle levels, impedes gas flow, and can cause catastrophic pump failure.

Maintenance is simplified, by cleaning a single component versus many feet of piping. The large trapping capacity leads to longer preventative maintenance cycles. The high trapping efficiency provides better protection to the pump, valves and other downstream instrumentation.